PART |
Description |
Maker |
MP6404 |
Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 6 in 1) High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications
|
TOSHIBA
|
2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SK152906 2SK1529 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
RJM0603JSC RJM0603JSC-15 |
Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
|
Renesas Electronics Corporation
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
GT60M303 EE07978 |
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) From old datasheet system
|
Toshiba Semiconductor
|
GT60M302 E001943 |
From old datasheet system N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT60M301 E001942 |
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) From old datasheet system HIGH POWER SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
2SK679 2SK679A 2SK679A-T 2SK679A-T/JD 2SK679A-T/JM |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS type field effect transistor
|
NEC[NEC] Toshiba Semiconductor
|
APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 MOSFET
|
Microsemi Corporation
|
2SJ200 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
|
TOSHIBA
|